BB814_08 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual Varicap Diode

BB814
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse current
Diode capacitance ¹)
V_R = 16 V
V_R = 16 V, T_j = 60 °C
V_R = 2 V
I_R
I_R
BB814-1
C_D
43
20
nA
200
nA
45
pF
Diode capacitance
Capacitance ratio
Series resistance
V_R = 8 V
V_R = 2 V, 8 V, f = 1 MHz
C_D = 38 pF, f = 100 MHz
BB814-2
BB814-1
BB814-2
C_D
C_D
C_D
C_D2/ C_D8
r_s
44.5
19.1
19.75
2.05
46.5
pF
21.95
pF
22.70
pF
2.25
0.5
Ω
1_{) In the reverse voltage range of VR = (2 to 8 V) for 4 diodes taped in sequence the max. deviation is 3 %.}
Package Dimensions in mm (Inches)
0.4 (.016) 0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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2
Document Number 85555
Rev. 1.6, 15-Apr-05