BB731 Datasheet, PDF (2/3 Pages) General Semiconductor – Tuner Diodes

BB731 and BB731S
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
at IR = 100µA
V(BR)R
32
–
–
V
Leakage Current
at VR = 30V
IR
–
–
30
nA
Capacitance f = 1MHZ
at VR = 28V
at VR = 25V
at VR = 1V
3.15
–
3.55
Ctot
–
3.5
–
pF
–
50
–
Effective Capacitance Ratio f = 1MHZ
at VR = 1 to 28V
Ctot (1V)
19.5
–
25
–
Ctot (28V)
at VR = 3 to 25V
Series Resistance
at f = 300 MHZ, Ctot = 25 pF
Series Inductance
Ctot (3V)
–
Ctot (25V)
rs
–
Ls
–
14
–
–
0.9
1.0
Ω
2.5
–
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias voltage of
VR = 0.5 to 28V is 3%
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2
Document Number 88157
15-May-02