BAT54-G Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diodes

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BAT54-G, BAT54A-G, BAT54C-G, BAT54S-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
I_R = 100 μA (pulsed)
V_(BR)
30
Pulse test t_p < 300 μs,  < 2 % at
V_R = 25 V
I_R
I_F = 0.1 mA, t_p < 300 μs,  < 2 %
V_F
I_F = 1 mA, t_p < 300 μs,  < 2 %
V_F
I_F = 10 mA, t_p < 300 μs,  < 2 %
V_F
I_F = 30 mA, t_p < 300 μs,  < 2 %
V_F
I_F = 100 mA, t_p < 300 μs,  < 2 %
V_F
V_R = 1 V, f = 1 MHz
C_D
I_F = 10 mA to I_R = 10 mA,
i_R = 1 mA, R_L = 100 
t_rr
LAYOUT FOR R_thJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
TYP.
MAX.
2
240
320
400
500
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
T_j = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
18867
0.2 0.4 0.6 0.8 1 1.2 1.4
V_F - Forward Voltage (V)
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
14
12
10
8
6
4
2
0
0
18868
4 8 12 16 20 24 28
V_R - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage V_R
Rev. 1.2, 25-Feb-13
2
Document Number: 83344
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