English
Language : 

BAT54-02V Datasheet, PDF (2/5 Pages) Vishay Siliconix – Schottky Diode in SOD-523
◁
BAT54-02V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction soldering point
Junction temperature
Storage temperature range
Test condition
Symbol
Value
Unit
RthJS
100
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown voltage 100 µA pulses
V(BR)
30
V
Leakage current
Pulse test tp < 300 µs, δ < 2 % at VR = 25 V
2
µA
Forward voltage
IF = 0.1 mA, tp < 300 µs, δ < 2 %
VF
240
mV
IF = 1 mA, tp < 300 µs, δ < 2 %
VF
320
mV
IF = 10 mA, tp < 300 µs, δ < 2 %
VF
400
mV
IF = 30 mA, tp < 300 µs, δ < 2 %
VF
500
mV
IF = 100 mA, tp < 300 µs, δ < 2 %
VF
800
mV
Diode capacitance
VR = 1 V, f = 1 MHz
Ctot
10
pF
Reverse recovery time
IF = 10 mA , IR = 10 mA to
trr
IR = 1 mA, RL = 100 Ω
5
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
14
Tj = 125 ° C
12
100
10
- 40 °C
10
8
1
6
25 ° C
4
0.1
2
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
18867
VF - Forward Current (V)
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
0
0 4 8 12 16 20 24 28
18868
VR - Reverse Voltage (V)
Figure 3. Typical Capacitance °C vs. Reverse Applied Voltage VR
1000
100
10
1
0.1
Tj = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30
18869
VR - Reverse Voltage (V)
Figure 2. Typical Variation of Reverse Current at Various
Temperatures
www.vishay.com
2
Document Number 85633
Rev. 1.4, 12-Dec-05
 ▷