BAT54-02V-V-G Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAT54-02V-V-G
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
100 µA pulses
Leakage current
Pulse test t_p < 300 µs,
δ < 2 % at V_R = 25 V
I_F = 0.1 mA, t_p < 300 µs, δ < 2 %
I_F = 1 mA, t_p < 300 µs, δ < 2 %
Forward voltage
I_F = 10 mA, t_p < 300 µs, δ < 2 %
I_F = 30 mA, t_p < 300 µs, δ < 2 %
I_F = 100 mA, t_p < 300 µs, δ < 2 %
Diode capacitance
V_R = 1 V, f = 1 MHz
Reverse recovery time
I_F = 10 mA , I_R = 10 mA to
I_R = 1 mA, R_L = 100 Ω
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
V_(BR)
30
V
2
µA
V_F
240
mV
V_F
320
mV
V_F
400
mV
V_F
500
mV
V_F
800
mV
C_D
10
pF
t_rr
5
ns
1000
T_j = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
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0.2 0.4 0.6 0.8 1 1.2 1.4
V_F - Forward Voltage (V)
Figure 1. Typical Forward Voltage Forward Current
vs. Various Temperatures
14
12
10
8
6
4
2
0
0
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4 8 12 16 20 24 28
V_R - Reverse Voltage (V)
Figure 3. Typical Capacitance °C vs.
Reverse Applied Voltage V_R
1000
100
10
1
0.1
T_j = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30
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V_R - Reverse Voltage (V)
Figure 2. Typical Variation of Reverse Current
vs. Various Temperatures
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For technical questions within your region, please contact one of the following: _{Document Number 82394}
[e-mail], [e-mail], [e-mail] _{Rev. 1.0, 14-Oct-10}