BAT46_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAT46
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
R_thJA
T_j
T_amb
T_stg
Value
300¹⁾
125
- 65 to + 125
- 65 to +150
Unit
K/W
°C
°C
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 100 µA (pulsed)
V_R = 1.5 V
V_R = 1.5 V, T_j = 60 °C
V_R = 10 V
Leakage current²⁾
V_R = 10 V, T_j = 60 °C
V_R = 50 V
V_R = 50 V, T_j = 60 °C
V_R = 75 V
V_R = 75 V, T_j = 60 °C
I_F = 0.1 mA
Forward voltage²⁾
I_F = 10 mA
I_F = 250 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
V_R = 1 V, f = 1 MHz
2) Pulse test t_p < 300 µs, δ < 2 %
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
1000
T_j = 60 °C
100
10
25 °C
1
0.1
0.01
0
0.2 0.4 0.6 0.8
1 1.2
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V_F - Forward Voltage (V)
Figure 1. Typical Instantaneous Forward Characteristics
Symbol
Min.
Typ.
Max.
Unit
V_(BR)
100
V
I_R
0.5
µA
I_R
5
µA
I_R
0.8
µA
I_R
7.5
µA
I_R
2
µA
I_R
15
µA
I_R
5
µA
I_R
20
µA
V_F
250
mV
V_F
450
mV
V_F
1000
mV
C_D
10
pF
C_D
6
pF
100
10
T_j = 60 °C
1
0.1
T_j = 25 °C
0.01
0
20
40
60
80
100
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VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
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For technical questions within your region, please contact one of the following: Document Number 85662
[e-mail], [e-mail], [e-mail] _{Rev. 1.7, 05-Aug-10}