BAT46W-V Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAT46W-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
R_thJA
300¹⁾
K/W
T_j
125
°C
T_amb
- 55 to + 125
°C
T_stg
- 55 to + 150
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 100 µA (pulsed)
Leakage current²⁾
V_R = 1.5 V
V_R = 1.5 V, T_j = 60 °C
V_R = 10 V
V_R = 10 V, T_j = 60 °C
V_R = 50 V
V_R = 50 V, T_j = 60 °C
V_R = 75 V
V_R = 75 V, T_j = 60 °C
Forward voltage²⁾
I_F = 0.1 mA
I_F = 10 mA
I_F = 250 mA
Diode capacitance
V_R = 0 V, f = 1 MHz
V_R = 1 V, f = 1 MHz
2) _{Pulse test tp < 300 µs, δ < 2 %}
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Symbol
Min
V_(BR)
100
I_R
I_R
I_R
I_R
I_R
I_R
I_R
I_R
V_F
V_F
V_F
C_D
C_D
Typ.
Max
Unit
V
0.5
µA
5
µA
0.8
µA
7.5
µA
2
µA
15
µA
5
µA
20
µA
250
mV
450
mV
1000
mV
10
pF
6
pF
1000
100
T_j = 60 °C
10
25 °C
1
0.1
0.01
0
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0.2 0.4 0.6 0.8 1 1.2
V_F - Forward Voltage (V)
Figure 1. Typical Instantaneous Forward Characteristics
100
10
Tj = 60 °C
1
0.1
Tj = 25 °C
0.01
0
20
40
60
80
100
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VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
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2
Document Number 85663
Rev. 1.3, 21-Nov-06