BAT46W-G Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

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BAT46W-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Reverse breakdown voltage
Leakage current ⁽¹⁾
Forward voltage ⁽¹⁾
Diode capacitance
Note
(1) _{Pulse test; tp  300 μs,  < 2 %}
I_R = 100 μA (pulsed)
V_R = 1.5 V
V_R = 1.5 V, T_j = 60 °C
V_R = 10 V
V_R = 10 V, T_j = 60 °C
V_R = 50 V
V_R = 50 V, T_j = 60 °C
V_R = 75 V
V_R = 75 V, T_j = 60 °C
I_F = 0.1 mA
I_F = 10 mA
I_F = 250 mA
V_R = 0 V, f = 1 MHz
V_R = 1 V, f = 1 MHz
V_(BR)
I_R
I_R
I_R
I_R
I_R
I_R
I_R
I_R
V_F
V_F
V_F
C_D
C_D
100
10
6
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
250
T_j = 60 °C
100
200
MAX.
0.5
5
0.8
7.5
2
15
5
20
250
450
1000
UNIT
V
μA
μA
μA
μA
μA
μA
μA
μA
mV
mV
mV
pF
pF
10
150
25 °C
1
100
0.1
0.01
0
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0.2 0.4 0.6 0.8 1 1.2
V_F - Forward Voltage (V)
Fig. 1 - Typical Instantaneous Forward Characteristics
100
50
0
0
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50
100
150
200
T_amb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
10
T_j = 60 °C
1
0.1
T_j = 25 °C
0.01
0
20
40
60
80
100
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VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Characteristics
Rev. 1.0, 25-Feb-13
2
Document Number: 85159
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