BAT42_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

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BAT42, BAT43
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage
Leakage current ⁽¹⁾
Forward voltage ⁽¹⁾
Diode capacitance
Reserve recovery time
Rectification efficieny
Note
(1) _{Pulse test; tp < 300 μs, tp/T < 0.02}
I_R = 100 μA (pulsed)
V_R = 25 V
V_R = 25 V, T_j = 100 °C
I_F = 200 mA
I_F = 10 mA
I_F = 50 mA
I_F = 2 mA
I_F = 15 mA
V_R = 1 V, f = 1 MHz
I_F = 10 mA, I_R = 10 mA,
i_R = 1 mA, R_L = 100 
R_L = 15 k, C_L = 300 pF,
f = 45 MHz, V_RF = 2 V
V_(BR)
30
I_R
I_R
V_F
BAT42
V_F
BAT42
V_F
BAT43
V_F
260
BAT43
V_F
C_D
t_rr
_v
80
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
7
MAX.
0.5
100
1000
400
650
330
450
5
UNIT
V
μA
μA
mV
mV
mV
mV
mV
pF
ns
%
250
200
150
100
50
0
0
50
100
150
200
18442
T_amb - Ambient Temperature (°C)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
1000
100
10
1
0.1
125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0
18444
10
20
30
40
50
V_R - Reverse Voltage (V)
Fig. 3 - Typical Reverse Characteristics
1000
100
125 °C
10
1
- 40 °C
25 °C
0.1
0.01
0 200 400 600 800 1000 1200
18443
V_F - Instantaneous Forward Voltage (mV)
Fig. 2 - Typical Forward Characteristics
14
12
10
8
6
4
2
18445
0
0
5 10 15 20 25 30
V_R - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.7, 06-May-13
2
Document Number: 85660
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