BAT42_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes

BAT42, BAT43
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
R_thJA
300¹⁾
K/W
Junction temperature
T_j
125
°C
Ambient operating temperature range
T_amb
- 65 to + 125
°C
Storage temperature range
T_stg
- 65 to +150
°C
1) _{Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 100 µA (pulsed)
Leakage current¹⁾
V_R = 25 V
V_R = 25 V, T_j = 100 °C
I_F = 200 mA
I_F = 10 mA
Forward voltage¹⁾
I_F = 50 mA
I_F = 2 mA
I_F = 15 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
i_R = 1 mA, R_L = 100 Ω
Rectification efficieny
R_L = 15 kΩ, C_L = 300 pF,
f = 45 MHz, V_RF = 2 V
1) _{Pulse test tp < 300 µs, tp/T < 0.02}
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
250
Part
Symbol Min
V_(BR)
30
I_R
I_R
V_F
BAT42
V_F
BAT42
V_F
BAT43
V_F
260
BAT43
V_F
C_D
t_rr
η_v
80
Typ.
Max
Unit
V
0.5
µA
100
µA
1000
mV
400
mV
650
mV
330
mV
450
mV
7
pF
5
ns
%
1000
200
100
125 °C
- 40 °C
150
10
25 °C
100
1
50
0
0
50
100
150
200
18442
T_amb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
0.1
0.01
0 200 400 600 800 1000 1200
18443
V_F - Instantaneous Forward Voltage (mV)
Figure 2. Typical Forward Characteristics
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For technical questions within your region, please contact one of the following: Document Number 85660
[e-mail], [e-mail], [e-mail] _{Rev. 1.6, 05-Aug-10}