BAT42W Datasheet, PDF (2/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

BAT42W, BAT43W
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
IR = 100µA (pulsed)
30
—
—
V
Leakage Current⁽¹⁾
IR
VR = 25V
VR = 25V, Tj = 100°C
—
—
—
—
0.5
100
µA
Forward Voltage⁽¹⁾
BAT42W
BAT42W VF
BAT43W
BAT43W
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
—
—
1.0
—
—
0.4
—
—
0.65
V
0.26
—
0.33
—
—
0.45
Capacitance
Ctot
VR = 1V, f = 1MHz
—
7
—
pF
Reverse Recovery Time
trr
IF = 10mA to IR = 10mA
to IR = 1mA, RL = 100 Ω
—
—
5
ns
Detection Efficiency
ην
RL = 15KΩ, CL = 300pF,
f = 45MHz, VRF = 2V
80
—
—
%
Note: (1) Pulse Test tp < 300µs, δ < 2%
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Admissible Power Dissipation
vs. Ambient Temperature
250
Fig. 2 – Typical Reverse Characteristics
1000
200
100
125°C
--40°C
150
10
25°C
100
1
50
0.1
0
0
1000
100
25 50 75 100 125 150 175 200
TA -- Ambient Temperature (°C)
Fig. 3 – Typical Reverse
Characteristics
125°C
100°C
10
75°C
50°C
1
25°C
0.1
0.01
0
10
20
30
40
50
VR -- Reverse Voltage (V)
www.vishay.com
2
0.01
0
18
16
14
12
10
8
6
4
2
0
0
200
400
600
800 1000 1200
VF -- Instantaneous Forward Voltage (mV)
Fig. 4 – Typical Capacitance
vs. Reverse Applied Voltage
10
20
30
40
50
60
VR -- Reverse Voltage (V)
Document Number 88138
5-Feb-02