BAT42W-V Datasheet, PDF (2/5 Pages) Vaishali Semiconductor – Small Signal Schottky Diodes

BAT42W-V/BAT43W-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
R_thJA
300¹⁾
K/W
Junction temperature
T_j
125
°C
Ambient operating temperature range
T_amb
- 55 to + 125
°C
Storage temperature range
T_stg
- 55 to + 150
°C
1) _{Valid provided that electrodes are kept at ambient temperature}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_R = 100 µA (pulsed)
Leakage current¹⁾
V_R = 25 V
V_R = 25 V, T_j = 100 °C
Forward voltage¹⁾
I_F = 200 mA
I_F = 10 mA
I_F = 50 mA
I_F = 2 mA
I_F = 15 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
i_R = 1 mA, R_L = 100 Ω
Rectification efficieny
R_L = 15 kΩ, C_L = 300 pF,
f = 45 MHz, V_RF = 2 V
1) _{Pulse test tp < 300 µs, tp/T < 0.02}
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Part
Symbol Min
V_(BR)
30
I_R
I_R
V_F
BAT42W-V
V_F
BAT42W-V
V_F
BAT43W-V
V_F
260
BAT43W-V
V_F
C_D
t_rr
η_v
80
Typ.
Max
Unit
V
0.5
µA
100
µA
1000
mV
400
mV
650
mV
330
mV
450
mV
7
pF
5
ns
%
250
200
150
100
50
0
0
18442
50
100
150
200
T_amb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
1000
100
125 °C
10
1
- 40 °C
25 °C
0.1
0.01
0 200 400 600 800 1000 1200
18443
V_F - Instantaneous Forward Voltage (mV)
Figure 2. Typical Reverse Characteristics
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2
Document Number 85661
Rev. 1.5, 27-Feb-07