BAT41_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAT41
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
1) _{Valid provided that electrodes are kept at ambient temperature}
Symbol
R_thJA
T_j
T_amb
T_stg
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage²⁾
I_R = 100 µA
Leakage current²⁾
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 100 °C
Forward voltage²⁾
I_F = 1 mA
I_F = 200 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
2) _{Pulse test, tp = 300 µs}
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
Symbol
V_(BR)
I_R
I_R
V_F
V_F
C_D
Min.
100
Value
Unit
300¹⁾
K/W
125
°C
- 65 to + 125
°C
- 65 to + 150
°C
Typ.
Max.
Unit
110
V
100
nA
20
µA
400
450
mV
1000
mV
2
pF
250
200
150
100
50
0
0
20225
50
100
150
T_amb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
100000
10000
1000
100
10
Tj = 125 °C
100 °C
75 °C
50 °C
25 °C
20226
1
0 10 20 30 40 50 60 70 80 90 100
V_R - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number 85659
[e-mail], [e-mail], [e-mail] _{Rev. 1.6, 12-Aug-10}