BAT17W Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)

BAT17W
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Minimum reverse breakdown
voltage
I_R = 10 µA
Maximum leakage current
Maximum forward voltage
Diode capacitance
V_R = 3 V
V_R = 3 V, T_amb = 60 °C
I_F = 10 mA
V_R = 0 V, f = 1 MHz
Package Dimensions in mm (Inches)
Symbol
Min
Typ.
Max
Unit
V_(BR)R
4
V
I_R
0.25
µA
I_R
1.25
µA
V_F
600
mV
C_D
1.0
pF
1.35 (0.053) max.
0.1 (0.004) max.
0.55 (0.022)
Cathode Band
0.25 (0.010) min.
Mounting Pad Layout
0.15 (0.006) max.
ISO Method E
1.70 (0.067)
1.40 (0.055)
0.72 (0.028)
1.40 (0.055)
17432
www.vishay.com
2
Document Number 85657
Rev. 1.2, 15-Jul-05