BAS85_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAS85
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
I_R = 10 µA (pulsed)
V_(BR)R
30
Leakage current
V_R = 25 V
I_R
Forward voltage
Pulse test t_p < 300 µs,
V_F
I_F = 0.1 mA
Pulse test t_p < 300 µs, I_F = 1 mA
V_F
Pulse test t_p < 300 µs,
V_F
I_F = 10 mA
Pulse test t_p < 300 µs,
V_F
I_F = 30 mA
Pulse test t_p < 300 µs,
V_F
I_F = 100 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
C_tot
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
t_rr
I_rr = 1 mA,
V
0.2
2
µA
240
mV
320
mV
400
mV
500
mV
800
mV
10
pF
5
ns
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
200
180
V_R = 30 V
160
140
R_thJA = 540 kW
120
100
P_R - Limit
at 100 % V_R
80
60
P_R - Limit
at 80 % V_R
40
20
0
25
50
75
100
125
150
15822
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
V_R = V_RRM
10
1
25
50
75
100
125
150
15823
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 85510
Rev. 1.8, 27-Mar-06