BAS85-M Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAS85-M
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
I_R = 10 µA (pulsed)
V_(BR)
30
V
Leakage current
V_R = 25 V
I_R
0.2
2
µA
Pulse test t_p < 300 µs,
I_F = 0.1 mA
V_F
240
mV
Pulse test t_p < 300 µs, I_F = 1 mA
V_F
320
mV
Forward voltage
Pulse test t_p < 300 µs,
I_F = 10 mA
V_F
400
mV
Pulse test t_p < 300 µs,
I_F = 30 mA
V_F
500
mV
Pulse test t_p < 300 µs,
I_F = 100 mA
V_F
800
mV
Diode capacitance
V_R = 1 V, f = 1 MHz
C_D
10
pF
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
I_rr = 1 mA,
t_rr
5
ns
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
200
180
V_R = 30 V
160
140
R_thJA = 540 kW
120
100
P_R - Limit
at 100 % V_R
80
60
P_R - Limit
at 80 % V_R
40
20
0
25
15822
50
75
100
125
150
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
1
T_j = 125 °C
T_j = 25 °C
0.1
0
0.5
1.0
1.5
15824
V_F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
1000
100
V_R = V_RRM
10
1
25
50
75
100
125
150
15823
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15825
V - Reverse Voltage (V)
R
Figure 4. Diode Capacitance vs. Reverse Voltage
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For technical questions within your region, please contact one of the following: Document Number 83403
[e-mail], [e-mail], [e-mail] _{Rev. 1.0, 13-Jan-11}