BAS85-GS18_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

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BAS85
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve beakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reserve recovery time
I_R = 10 μA (pulsed)
V_(BR)
30
V_R = 25 V
I_R
Pulse test t_p < 300 μs,
I_F = 0.1 mA
V_F
Pulse test t_p < 300 μs, I_F = 1 mA
V_F
Pulse test t_p < 300 μs,
I_F = 10 mA
V_F
Pulse test t_p < 300 μs,
I_F = 30 mA
V_F
Pulse test t_p < 300 μs,
I_F = 100 mA
V_F
V_R = 1 V, f = 1 MHz
C_D
I_F = 10 mA, I_R = 10 mA,
i_R = 1 mA
t_rr
TYP.
0.2
500
MAX.
2
240
320
400
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
200
180
160
140
120
100
80
60
40
20
0
25
15822
V_R = 30 V
R_thJA = 540 kW
P_R - Limit
at 100 % V_R
P_R - Limit
at 80 % V_R
50
75
100
125
150
T_j - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
1
T_j = 125 °C
T_j = 25 °C
0.1
0
0.5
1.0
1.5
15824
V_F - Forward Voltage (V)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
100
V_R = V_RRM
10
1
25
15823
50
75
100
125
150
T_j - Junction Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
10
9
8
7
6
5
4
3
2
1
0
0.1
15825
f = 1 MHz
1
10
100
V_R - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 21-Jan-13
2
Document Number: 85510
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