BAS81_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes

BAS81, BAS82, BAS83
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
on PC board 50 mm x 50 mm x 1.6 mm
R_thJA
320
K/W
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
- 65 to + 150
°C
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 0.1 mA
I_F = 1 mA
I_F = 15 mA
Reverse current
V_R = V_Rmax
Diode capacitance
V_R = 1 V, f = 1 MHz
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
14
12
R_thJA = 540 K/W
10
V_R = 60 V
8
6
PP_RR - Limmiittaat t11000%%V_RV_R
4
P_R - Limit at 80 % V_R
2
0
25
50
75
100
125
150
15794
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Symbol
Min.
Typ.
Max.
Unit
V_F
330
mV
V_F
410
mV
V_F
1000
mV
I_R
200
nA
C_D
1.6
pF
1000
100
V_R = V_RRM
10
1
0.1
25
50
75
100
125
150
15795
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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2
For technical questions within your region, please contact one of the following: Document Number 85509
[e-mail], [e-mail], [e-mail]
Rev. 1.8, 23-Jul-10