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| BAS70-HT3 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Schottky Diodes | |||
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BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage IR = 10 µA (pulsed)
Leakage current
VR = 50 V, tp < 300 µs
Forward voltage
tp < 300 µs, IF = 1.0 mA
tp < 300 µs, IF = 15 mA
Capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100 â¦
Symbol
Min
V(BR)R
70
IR
VF
VF
Ctot
trr
Package Dimensions in mm
VISHAY
Typ.
Max
Unit
V
20
100
nA
410
mV
1000
mV
1.5
2
pF
5
ns
18057
www.vishay.com
2
ISO Method E
Document Number 85689
Rev. 3, 02-Jun-03
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