BAS70-02V-V-G Datasheet, PDF (2/3 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAS70-02V-V-G
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
I_R = 10 µA (pulsed)
V_(BR)
70
V
Leakage current
V_R = 50 V, t_p < 300 µs
I_R
20
100
nA
Forward voltage
t_p < 300 µs, I_F = 1.0 mA
V_F
t_p < 300 µs, I_F = 15 mA
V_F
410
mV
1000
mV
Diode capacitance
V_R = 0 V, f = 1 MHz
C_D
1.5
2
pF
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
I_rr = 1 mA, R_L = 100 Ω
t_rr
5
ns
Package Dimensions in millimeters (inches): SOD-523
1.7 (0.067)
1.5 (0.059)
1.3 (0.051)
1.1 (0.043)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
16864
0.9 (0.035)
0.7 (0.028)
foot print recommendation:
1.45 (0.057)
0.35 (0.014)
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2
For technical questions within your region, please contact one of the following: Document Number 82393
[e-mail], [e-mail], [e-mail] _{Rev. 1.0, 14-Oct-10}