BAS70-00-V_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes, Single & Dual

BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Reverse breakdown voltage
I_R = 10 μA (pulsed)
V_(BR)
70
Leakage current
V_R = 50 V
I_R
Forward voltage
I_F = 1.0 mA
V_F
Forward voltage¹⁾
I_F = 15 mA,
V_F
Diode capacitance
V_R = 0 V, f = 1 MHz
C_D
Reverse recovery time
I_F = I_R = 10 mA, i_R = 1 mA,
R_L = 100 Ω
t_rr
1) _{Pulse test; tp ≤ 300 μs}
Layout for R_thJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Typ.
Max
Unit
V
20
100
nA
410
mV
1000
mV
1.5
2
pF
5
ns
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85702
[e-mail], [e-mail], [e-mail] _{Rev. 1.8, 05-Aug-10}