BAS70-00-G Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Schottky Diodes

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BAS70-00-G to BAS70-06-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve beakdown voltage
Leakage current
Forward voltage
Forward voltage ⁽¹⁾
Diode capacitance
Reserve recovery time
I_R = 10 μA (pulsed)
V_R = 50 V
I_F = 1.0 mA
I_F = 15 mA
V_R = 0 V, f = 1 MHz
I_F = I_R = 10 mA, i_R = 1 mA,
R_L = 100 
V_(BR)
70
I_R
V_F
V_F
C_D
t_rr
Note
(1) _{Pulse test; tp  300 μs}
LAYOUT FOR R_thJA TEST
Thickness:
Fiberglass 1.5 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
TYP.
20
1.5
MAX.
100
410
1000
2
5
UNIT
V
nA
mV
mV
pF
ns
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.5 (0.020)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
0.95 (0.037)
Rev. 1.0, 25-Feb-13
2
Document Number: 85157
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