BAS581-02V-V-G Datasheet, PDF (2/3 Pages) Vishay Siliconix – Small Signal Schottky Diode

BAS581-02V-V-G
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
I_r = 100 µA
Leakage current
V_R = 30 V
Forward voltage
I_F = 1 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
Symbol
Min.
Typ.
Max.
Unit
V_(BR)
40
V
I_r
0.5
μA
V_F
370
mV
C_D
2
pF
Package Dimensions in millimeters (inches): SOD-523
1.7 (0.067)
1.5 (0.059)
1.3 (0.051)
1.1 (0.043)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
16864
0.9 (0.035)
0.7 (0.028)
foot print recommendation:
1.45 (0.057)
0.35 (0.014)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 82392
[e-mail], [e-mail], [e-mail] _{Rev. 1.0, 14-Oct-10}