BAS520-02V Datasheet, PDF (2/5 Pages) Vishay Siliconix – BAS520-02V

BAS520-02V
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
I_R = 1 µA (pulsed)
V_(BR)
30
V
Leakage current
Pulse test V_R = 30 V, t_p < 300 µs
I_R
0.5
1
µA
Forward voltage
Pulse test t_p < 300 µs,
V_F
I_F = 1.0 mA
320
mV
Pulse test t_p < 300 µs,
V_F
I_F = 200 mA,
600
mV
Diode capacitance
V_R = 0 V, f = 1 MHz
C_tot
25
30
pF
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
t_rr
10
ns
I_rr = 1 mA, R_L = 100 Ω
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
25
f = 1 MHz
20
15
10
5
0
0
18960
4 8 12 16 20 24 28 32 36
V_R - Reverse V oltage (V)
Figure 1. Typical Capacitance vs. Reverse Voltage
50
45
40
35
30
25
20
15
10
5
0
0.1
18962
1
10
100
I _R - Reverse Current ( µA )
1000
Figure 3. Typical Reverse Voltage vs. Reverse Current
1000
100
10
1
0.1
0.01
0
18961
0.1 0.2 0.3 0.4 0.5 0.6
V_F - Forward V oltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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Document Number 85846
Rev. 1.2, 29-Jun-05