BAS386_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Schottky Diode

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TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
BAS386
Vishay Semiconductors
500
450 VR = 50 V
400
350
300
250
P_R - Limit
200
at 100 % V_R
150
100 ^{RthJA = 540 K/W}
50
P_R - Limit
at 80 % V_R
0
25
50
75 100 125 150
15827
T_j - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15830
f = 1 MHz
1
10
100
V_R - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
10000
1000
V_R = V _RRM
100
10
1
25
15828
50
75 100 125 150
T_j - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
100
10
1
T_j = 125 °C
T_j = 25 °C
0.1
0
15829
0.5
1.0
1.5
V_F - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
0.71
1.3
0.152
0.355
1.27
95 10329
2.5
24
Fig. 5 - Board for R_thJA Definition (in mm)
Rev. 2.0, 15-May-12
2
Document Number: 85505
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