BA892V-04W Datasheet, PDF (2/5 Pages) Vishay Siliconix – Band Switching Diodes - Dual, Series in SOT-323

BA892V-04W
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse voltage
I_R = 10 µA
V_R
35
V
Reverse current
V_R = 20 V
I_R
20
nA
Forward voltage
I_F = 100 mA
V_F
1.1
V
Diode capacitance
f = 1 MHz, V_R = 0
C_D
1.1
pF
f = 1 MHz, V_R = 1 V
C_D
0.9
1.2
pF
f = 1 MHz, V_R = 3 V
C_D
0.85
1.1
pF
Forward resistance
f = 100 MHz, I_F = 1 mA
r_f
0.6
Ω
f = 100 MHz, I_F = 3 mA
r_f
0.45
0.7
Ω
f = 100 MHz, I_F = 10 mA
r_f
0.34
0.5
Ω
Charge carrier life time
I_F = 10 mA, I_R = 6 mA, i_R = 3 mA
t_rr
90
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
I_F - Forward Current (mA)
Figure 1. Forward Resistance vs. Forward Current
100.00
10.00
1.00
0.10
0.01
0.5 0.6 0.7 0.8 0.9 1.0
18324
V_F - Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1.2
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0.0
0
18332
4 8 12 16 20 24 28
V_R - Reverse V oltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
70
60
50
40
30
20
10
18328
0
0.01
0.1 1.0 10 100 1000
I_R - Reverse Current ( µA )
Figure 4. Reverse Voltage vs. Reverse Current
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2
Document Number 85649
Rev. 1.2, 24-Jun-05