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8TQ100G Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 8 A
8TQ...G
Vishay High Power Products Schottky Rectifier, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
CT
Typical series inductance
LS
Maximum voltage rate of change
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
8A
16 A
TJ = 25 °C
8A
16 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.72
0.88
0.58
0.69
0.28
7
500
8
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
RthJC
RthCS
DC operation
See fig. 4
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
VALUES
- 55 to 175
UNITS
°C
2.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
8TQ080G
8TQ100G
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93415
Revision: 03-Nov-08