8S2TH06FP_10 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

VS-8S2TH06FP
Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt^®
DYNAMIC RECOVERY CHARACTERISTICS FOR BOTH DIODES (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = - 50 A/μs, V_R = 30 V
-
t_rr
T_J = 25 °C
-
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 8 A
-
dI_F/dt = - 200 A/μs
V_R = 390 V
-
-
-
-
25
19
-
ns
35
-
2.8
-
A
4.6
5.5
26
-
nC
84
-
THERMAL - MECHANICAL SPECIFICATIONS FOR BOTH DIODES
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Maximum junction and
storage temperature range
T_J, T_Stg
- 55
Thermal resistance,
junction to case
R_thJC
-
Thermal resistance,
Mounting surface, flat, smooth
case to heatsink
R_thCS
and greased
-
-
Weight
-
6.0
Mounting torque
(5.0)
Marking device
Case style 2L TO-220 FULL-PAK
TYP.
-
MAX.
175
4.1
4.8
0.2
-
2.0
-
0.07
-
12
-
(10)
8S2TH06FP
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
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For technical questions within your region, please contact one of the following: Document Number: 94553
[e-mail], [e-mail], [e-mail]
Revision: 19-Aug-10