8E2TL06-E Datasheet, PDF (2/10 Pages) Vishay Siliconix – Ultralow VF Ultrafast Rectifier, 8 A FRED Pt®

VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
Vishay Semiconductors
Ultralow V_F Ultrafast Rectifier,
8 A FRED Pt^®
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
60
I_F = 8.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
150
t_rr
T_J = 25 °C
-
200
T_J = 125 °C
-
255
T_J = 25 °C
I_F = 8 A
-
15
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 390 V
-
20
T_J = 25 °C
Q_rr
T_J = 125 °C
-
1.5
-
2.4
MAX.
100
250
-
-
-
-
-
-
UNITS
ns
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
junction to case
FULL-PAK
Thermal resistance,
junction to ambient per leg
Typical thermal resistance,
case to heatsink
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220
Case style TO-220 FULL-PAK
MIN.
- 65
-
-
-
-
-
-
6
(5)
TYP.
-
2
5
-
MAX.
175
2.4
5.5
70
UNITS
°C
°C/W
0.5
-
2
-
0.07
-
12
-
(10)
8E2TL06
8E2TL06FP
g
oz.
kgf · cm
(lbf · in)
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2
For technical questions within your region, please contact one of the following: Document Number: 93168
[e-mail], [e-mail], [e-mail]
Revision: 19-Aug-10