80RIA40PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Phase Control Thyristors (Stud Version), 80 A

80RIA...PbF/81RIA...PbF Series
Vishay High Power Products ^{Phase Control Thyristors}
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
I_T(AV)
Maximum RMS on-state current
I_T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
I_TSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I²âˆšt
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
I_pk = 250 A, T_J = 25 °C, t_p = 10 ms sine pulse
T_J = 25 °C, anode supply 12 V resistive load
VALUES
80
85
125
1900
1990
1600
1675
18
16
12.7
11.7
180.5
0.99
1.13
2.29
1.84
1.60
200
400
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t_d
t_q
TEST CONDITIONS
T_J = 125 °C, V_d = Rated V_DRM, I_TM = 2 x dI/dt snubber
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t_p = 6 µs, t_r = 0.5 µs
Per JEDEC standard RS-397, 5.2.2.6.
Gate pulse: 10 V, 15 Ω source, t_p = 6 µs, t_r = 0.1 µs,
V_d = Rated V_DRM, I_TM = 50 Adc, T_J = 25 °C
I_TM = 50 A, T_J = T_J maximum, dI/dt = - 5 A/µs, V_R = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t_p = 500 µs
VALUES
300
1
110
UNITS
A/µs
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I_RRM,
I_DRM
TEST CONDITIONS
T_J = 125 °C exponential to 67 % rated V_DRM
T_J = 125 °C rated V_DRM/V_RRM applied
VALUES UNITS
500
V/µs
15
mA
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Document Number: 94392
Revision: 11-Aug-08