English
Language : 

80CPQ020PBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 40 A
www.vishay.com
VS-80CPQ020PbF, VS-80CPQ020-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward
voltage drop per leg
VFM (1)
Maximum reverse
leakage current per leg
IRM (1)
Threshold voltage
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
VF(TO)
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
40 A
80 A
TJ = 25 °C
40 A
80 A
TJ = 125 °C
40 A
80 A
TJ = 150 °C
TJ = 125 °C
VR = 5 V
TJ = 150 °C
VR = 10 V
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.46
0.55
0.36
0.46
0.32
0.43
110
600
5.5
1100
0.185
6500
7.5
10 000
UNITS
V
mA
V
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES
- 55 to 150
UNITS
°C
0.6
0.3
°C/W
0.25
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80CPQ020
Revision: 31-Aug-11
2
Document Number: 94256
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000