72299 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Click Here & Upgrade
Expanded Features
Documents ^PDF
Unlimited Pages
Comp_Sle_Pte_{ICE Device Model Si4911DY}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = −250 µA
VDS = −5 V, VGS = −10 V
VGS = −10 V, ID = −7.3 A
VGS = −4.5 V, ID = −5.6 A
VDS = −10 V, ID = −7.3 A
IS = −1.7 A, VGS = 0 V
VDS = −15 V, VGS = −105 V, ID = −7.34 A
VDD = −15 V, RL = 15 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
IF = −1.7 A, di/dt – 100 A/µs
Simulated Measured
Data
Data
2.1
234
0.020
0.035
18
−0.80
0.020
0.033
16
−0.80
32
33
5.8
5.8
8.6
8.6
20
10
15
15
178
110
34
70
55
60
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Unit
V
A
Ω
S
V
nC
ns
www.vishay.com
2
Document Number: 72299
20-May-04