70HFR Datasheet, PDF (2/7 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 70 A

70HF(R) Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Stud Version), 70 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
I_F(AV)
I_F(RMS)
Maximum peak, one cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
TEST CONDITIONS
70HF(R)
10 TO 120 140/160
180° conduction, half sine wave
70
140
110
110
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
1200
1250
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J =
T_J maximum
1000
1050
7100
6450
t = 10 ms _{100 % VRRM}
t = 8.3 ms ^reapplied
5000
4550
t = 0.1 to 10 ms, no voltage reapplied
71 000
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
0.79
1.00
(16.7 % x π x I_F(AV) < I < π x I_F(AV)), T_J = T_J maximum
2.33
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 220 A, T_J = 25 °C, t_p = 400 µs rectangular wave
1.53
1.35
1.46
UNITS
A
°C
A
A
A²s
A²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
DC operation
R_thCS
Mounting surface, smooth, flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
70HF(R)
10 TO 120 140/160
UNITS
- 65 to 180 - 65 to 150
°C
0.45
K/W
0.25
3.4 ^{+ 0 - 10 %}
(30)
2.3 ^{+ 0 - 10 %}
(20)
N·m
(lbf · in)
17
g
0.6
oz.
DO-203AB (DO-5)
www.vishay.com
2
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Document Number: 93521
Revision: 20-Jun-08