70511 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 75-V (D-S) 200°C MOSFET

SPICE Device Model SUM110N08-05
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Forward Voltage ^a
Dynamic ^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time ^c
Rise Time ^c
Turn-Off Delay Time ^c
Fall Time ^c
Reverse Recovery Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = V_GS, I_D = 250 µA
V_DS > 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125°C
V_GS = 10 V, I_D = 30 A, T_J = 200°C
V_DS = 15 V, I_D = 30 A
I_S = 110 A, V_GS = 0 V
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 35 V, V_GS = 10 V, I_D = 110 A
V_DD = 35 V, R_L = 0.40 Ω
I_D ≅ 110 A, V_GEN = 10 V, R_G = 2.5 Ω
I_F = 85 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
3.1
1197
0.0038
0.0063
0.0084
109
0.92
7663
936
406
139
36
45
88
110
130
149
55
0.0038
1
7900
950
550
145
30
45
25
200
65
165
80
Unit
V
A
Ω
S
V
Pf
NC
Ns
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2
Document Number: 70511
09-Jun-04