63CTQ100PBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 30 A

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VS-63CTQ100PbF, VS-63CTQ100-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum instantaneous reverse current
I_RM
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
C_T
L_S
dV/dt
TEST CONDITIONS
30 A
60 A
T_J = 25 °C
30 A
60 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
Rated DC voltage
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V_R
TYP. MAX.
0.78 0.82
0.94
1.0
0.64 0.69
0.78 0.83
0.02
0.3
11
20
1100
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case per leg
R_thJC DC operation
Typical thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-220AB
VALUES
- 65 to 175
UNITS
°C
1.2
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
63CTQ100
Revision: 29-Aug-11
2
Document Number: 94245
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