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63CPQ100GPBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 30 A
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VS-63CPQ100GPbF, VS-63CPQ100G-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
30 A
60 A
30 A
60 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.77
0.92
0.64
0.76
0.3
25
0.38
5.75
1300
7.5
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
See fig. 4
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC (JEDEC)
VALUES UNITS
- 55 to 175 °C
0.8
0.4
°C/W
0.25
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
63CPQ100G
Revision: 31-Aug-11
2
Document Number: 94243
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