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60EPU02PBF_12 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 60 A FRED Pt®
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
Reverse recovery time
trr
TJ = 25 °C
-
28
TJ = 125 °C
-
50
Peak recovery current
TJ = 25 °C
IF = 60 A
-
4
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 160 V
-
8
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
59
-
220
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
-
TYP.
-
MAX.
0.70
0.2
-
5.5
-
0.2
-
-
1.2
60EPU02
60APU02
UNITS
K/W
g
oz.
Nm
Revision: 15-Aug-11
2
Document Number: 94021
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000