60EPS16PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Voltage Input Rectifier Diode, 60 A

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ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
VS-60EPS16PbF
Vishay Semiconductors
SYMBOL
V_FM
r_t
V_F(TO)
I_RM
TEST CONDITIONS
30 A, T_J = 25 °C
60 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.0
1.07
3.96
0.74
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
T_J, T_Stg
R_thJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
R_thJA
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AC modified (JEDEC)
VALUES
- 40 to 150
0.35
UNITS
°C
40
°C/W
0.2
6
g
0.21
oz.
6.0 (5)
12 (10)
kgf · cm
(lbf · in)
60EPS16
Revision: 18-Aug-11
2
Document Number: 94346
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