60CTQ150PBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 30 A

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VS-60CTQ150PbF, VS-60CTQ150-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP
Maximum forward voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
30 A
60 A
30 A
60 A
T_J = 25 °C
T_J = 125 °C
0.83
0.98
0.67
0.82
Maximum reverse leakage current per leg
See fig. 2
I_RM
Typical junction capacitance per leg
C_T
T_J = 25 °C
T_J = 125 °C
7
V_R = Rated V_R
7.2
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C -
Typical series inductance per leg
L_S
Measured lead to lead 5 mm from package body
-
Maximum voltage rate of change
dV/dt Rated V_R
-
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
MAX.
0.88
1.09
0.72
0.87
75
20
650
7.5
10 000
UNITS
V
μA
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
per leg
junction to case
per package
R_thJC
DC operation
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
UNITS
- 55 to 175
°C
1.2
0.6
°C/W
0.25
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
60CTQ150
Revision: 29-Aug-11
2
Document Number: 94240
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