4N25 Datasheet, PDF (2/9 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Transistor Output

4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
6.0
V
Forward current
I_F
60
mA
Surge current
t < 10 µs
I_FSM
2.5
A
Power dissipation
P_diss
100
mW
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
V_CEO
70
V
Emitter-base breakdown voltage
V_EBO
7.0
V
Collector current
I_C
50
mA
Collector currrent
t < 1.0 ms
I_C
100
mA
Power dissipation
P_diss
150
mW
Coupler
Parameter
Isolation test voltage
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
Test condition
DIN IEC 112/VDE0303, part 1
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
max.10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Symbol
V_ISO
R_IO
R_IO
T_stg
T_amb
T_j
T_sld
Value
5300
≥ 7.0
≥ 7.0
≥ 0.4
175
10¹²
10¹¹
- 55 to + 150
- 55 to + 100
100
260
Unit
V_RMS
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
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2
Document Number 83725
Rev. 1.4, 26-Jan-05