4EWH02FN-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 4 A FRED Pt®

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VS-4EWH02FN-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
23
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
24
t_rr
T_J = 25 °C
-
20
T_J = 125 °C
-
27
Peak recovery current
T_J = 25 °C
I_F = 4 A
-
2
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 160 V
-
3.4
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
20
-
46
MAX.
27
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Approximate weight
Marking device
Case style D-PAK (TO-252AA)
MIN.
- 65
-
TYP.
-
MAX.
175
2.7
3.2
0.3
0.01
4EWH02FN
UNITS
°C
°C/W
g
oz.
Revision: 14-Nov-11
2
Document Number: 93258
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