30PT100 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 30 A

30PT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
V_FM ⁽¹⁾
Reverse leakage current
I_RM ⁽¹⁾
Junction capacitance
C_T
Series inductance
L_S
Maximum voltage rate of change
dV/dt
Note
(1) _{Pulse width < 300 µs, duty cycle < 2 %}
TEST CONDITIONS
30 A
60 A
T_J = 25 °C
30 A
60 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
-
-
-
-
-
TBD
1650
7.5
-
MAX.
0.77
0.9
0.64
0.76
200
15
-
-
10 000
UNITS
V
µA
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
Typical thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Case style
Marking device
minimum
maximum
JEDEC
VALUES
- 55 to 175
UNITS
°C
0.8
°C/W
0.25
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
TO-247AC (modified)
30PT100
www.vishay.com
2
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Document Number: 94532
Revision: 22-Oct-07