30ETH06PBF_11 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED Pt

VS-30ETH06PbF
Vishay Semiconductors ^{Hyperfast Rectifier, 30 A FRED Pt®}
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
28
Reverse recovery time
t_rr
T_J = 25 °C
-
31
T_J = 125 °C
-
77
Peak recovery current
T_J = 25 °C
I_F = 30 A
-
3.5
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
7.7
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
65
-
345
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Thermal resistance,
junction to ambient per leg
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
0.7
1.1
-
70
0.2
-
2.0
-
0.07
-
12
-
(10)
30ETH06
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94019
[e-mail], [e-mail], [e-mail]
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000