30EPF02PBF_13 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 30 A

VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
TEST CONDITIONS
T_C = 98 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
30
300
350
450
636
6360
UNITS
A
A²s
A²ïƒ–s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
30 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.41
12.5
0.9
0.1
2.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Snap factor
S
TEST CONDITIONS
I_F at 20 A_pk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
I_FM
t_rr
t_a t_b
dir
t
dt
Q_rr
I_RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
R_thJC
R_thJA
DC operation
Maximum thermal resistance,
case to heatsink
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified
Case style TO-247AC
VALUES
- 40 to 150
UNITS
°C
0.8
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
30EPF02
30EPF04
30EPF06
30APF02
30APF04
30APF06
Revision: 20-Oct-11
2
Document Number: 93693
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