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30CTT100_15 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Generation 5.0
30CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
-
-
-
-
-
-
550
8.0
-
MAX.
0.81
0.92
0.67
0.79
120
5
-
-
10 000
UNITS
V
µA
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Case style
Marking device
minimum
maximum
VALUES
- 55 to 175
UNITS
°C
2.5
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
TO-220AB
30CTT100
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94558
Revision: 19-Feb-08