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30CTT100_12 Datasheet, PDF (2/8 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 2 x 15 A
30CTT100
Vishay High Power Products High Performance
Schottky Generation 5.0,
2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
-
-
-
-
-
-
550
8.0
-
MAX.
0.81
0.92
0.67
0.79
120
5
-
-
10 000
UNITS
V
µA
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
RthJC
DC operation
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
2.5
1.25
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
30CTT100
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94558
Revision: 07-Oct-08