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30BQ100PBF_13 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 3 A
VS-30BQ100PbF
Vishay High Power Products Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.79
0.90
0.62
0.70
0.5
5.0
115
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
TEST CONDITIONS
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 175
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
V3J
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94181
Revision: 04-Mar-10