30BQ100GPBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 3 A

30BQ100GPbF
Vishay High Power Products ^{Schottky Rectifier, 3 A}
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 µs, duty cycle < 2 %}
I_RM ⁽¹⁾
C_T
L_S
dV/dt
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 125 °C
6A
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.79
0.90
0.62
0.70
0.1
5.0
115
3.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg ⁽¹⁾
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
R_thJL ⁽²⁾
R_thJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
- 55 to 175
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
V3JG
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 94506
Revision: 24-Apr-08