30BQ015PBF_11 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 3.0 A

VS-30BQ015PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 75 °C
6A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.35
0.40
0.30
0.35
4
50
1120
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
T_J ⁽¹⁾
T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
V3C
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94178
[e-mail], [e-mail], [e-mail]
Revision: 23-Feb-11