30BQ015-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Schottky Rectifier, 3.0 A

VS-30BQ015-M3
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width = 300 μs, duty cycle = 2 %}
TEST CONDITIONS
3A
T_J = 25 °C
6A
3A
T_J = 75 °C
6A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.35
0.43
0.30
0.38
4
50
1120
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
T_J ⁽¹⁾
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
3C
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Revision: 06-Sep-10